Toshiba Type N-Channel MOSFET, 30 A, 250 V Enhancement, 3-Pin TO-3PN TK30J25D,S1F(O
- RS Stock No.:
- 144-5214
- Mfr. Part No.:
- TK30J25D,S1F(O
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD1,075.00
(exc. GST)
TWD1,128.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 30 unit(s) shipping from March 02, 2026
- Plus 5 unit(s) shipping from March 09, 2026
- Plus 100 unit(s) shipping from May 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD215.00 | TWD1,075.00 |
| 25 - 45 | TWD209.40 | TWD1,047.00 |
| 50 - 245 | TWD204.60 | TWD1,023.00 |
| 250 - 495 | TWD199.40 | TWD997.00 |
| 500 + | TWD194.60 | TWD973.00 |
*price indicative
- RS Stock No.:
- 144-5214
- Mfr. Part No.:
- TK30J25D,S1F(O
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-3PN | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 260W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.5mm | |
| Height | 20mm | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-3PN | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 260W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.5mm | ||
Height 20mm | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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