Toshiba DTMOSIV Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 TK7P65W,RQ(S
- RS Stock No.:
- 133-2801
- Mfr. Part No.:
- TK7P65W,RQ(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD240.00
(exc. GST)
TWD252.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 120 unit(s) ready to ship from another location
- Plus 1,340 unit(s) shipping from January 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD24.00 | TWD240.00 |
| 50 - 90 | TWD23.40 | TWD234.00 |
| 100 - 490 | TWD22.90 | TWD229.00 |
| 500 - 990 | TWD22.30 | TWD223.00 |
| 1000 + | TWD21.70 | TWD217.00 |
*price indicative
- RS Stock No.:
- 133-2801
- Mfr. Part No.:
- TK7P65W,RQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | DTMOSIV | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series DTMOSIV | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.6mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Related links
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