Toshiba DTMOSIV Type N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-252 TK11P65W,RQ(S
- RS Stock No.:
- 133-2796
- Mfr. Part No.:
- TK11P65W,RQ(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD226.00
(exc. GST)
TWD237.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Plus 150 unit(s) shipping from January 26, 2026
- Final 1,435 unit(s) shipping from February 02, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD45.20 | TWD226.00 |
| 25 - 45 | TWD44.20 | TWD221.00 |
| 50 - 245 | TWD42.80 | TWD214.00 |
| 250 - 495 | TWD42.00 | TWD210.00 |
| 500 + | TWD41.00 | TWD205.00 |
*price indicative
- RS Stock No.:
- 133-2796
- Mfr. Part No.:
- TK11P65W,RQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | DTMOSIV | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.7V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series DTMOSIV | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.7V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
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