IXYS Linear L2 Type N-Channel MOSFET, 178 A, 100 V Enhancement, 4-Pin SOT-227 IXTN200N10L2
- RS Stock No.:
- 125-8048
- Mfr. Part No.:
- IXTN200N10L2
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD1,525.00
(exc. GST)
TWD1,601.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 2 | TWD1,525.00 |
| 3 - 4 | TWD1,488.00 |
| 5 + | TWD1,463.00 |
*price indicative
- RS Stock No.:
- 125-8048
- Mfr. Part No.:
- IXTN200N10L2
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 178A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | Linear L2 | |
| Package Type | SOT-227 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 540nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 830W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 178A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series Linear L2 | ||
Package Type SOT-227 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 540nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 830W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Linear L2 Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS Linear Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS Linear Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Linear Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227 IXTN62N50L
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXTN22N100L
- IXYS Linear Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227 IXTN46N50L
- IXYS Type N-Channel MOSFET 800 V Enhancement, 4-Pin SOT-227