IXYS Linear Type N-Channel MOSFET, 46 A, 500 V Enhancement, 4-Pin SOT-227
- RS Stock No.:
- 686-7868
- Mfr. Part No.:
- IXTN46N50L
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD1,845.00
(exc. GST)
TWD1,937.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 9 unit(s) shipping from February 02, 2026
- Plus 10 unit(s) shipping from May 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 2 | TWD1,845.00 |
| 3 - 4 | TWD1,789.00 |
| 5 + | TWD1,736.00 |
*price indicative
- RS Stock No.:
- 686-7868
- Mfr. Part No.:
- IXTN46N50L
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-227 | |
| Series | Linear | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 260nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 700W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 38.2mm | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-227 | ||
Series Linear | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 260nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 700W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 38.2mm | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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