Toshiba DTMOSIV N-Channel MOSFET, 27.6 A, 650 V Enhancement, 3-Pin TO-220 TK28E65W,S1X(S

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Subtotal (1 pack of 2 units)*

TWD409.00

(exc. GST)

TWD429.44

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8TWD204.50TWD409.00
10 - 18TWD200.00TWD400.00
20 - 48TWD194.50TWD389.00
50 - 98TWD190.50TWD381.00
100 +TWD185.00TWD370.00

*price indicative

RS Stock No.:
125-0560
Mfr. Part No.:
TK28E65W,S1X(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

27.6A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

DTMOSIV

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-30V, +30V

Typical Gate Charge Qg @ Vgs

75nC

Maximum Power Dissipation Pd

230W

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.16mm

Height

15.1mm

Width

4.45mm

Automotive Standard

No

COO (Country of Origin):
JP

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