Toshiba DTMOSIV Type N-Channel MOSFET, 27.6 A, 650 V Enhancement, 3-Pin TO-220 TK28E65W,S1X(S

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Subtotal (1 pack of 2 units)*

TWD375.00

(exc. GST)

TWD393.76

(inc. GST)

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  • 16 unit(s) shipping from March 09, 2026
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Units
Per unit
Per Pack*
2 - 8TWD187.50TWD375.00
10 - 18TWD183.50TWD367.00
20 - 48TWD178.50TWD357.00
50 - 98TWD174.50TWD349.00
100 +TWD169.50TWD339.00

*price indicative

RS Stock No.:
125-0560
Mfr. Part No.:
TK28E65W,S1X(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27.6A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

DTMOSIV

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

230W

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Length

10.16mm

Standards/Approvals

No

Width

4.45 mm

Height

15.1mm

Automotive Standard

No

COO (Country of Origin):
JP

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