ROHM RUR020N02 Type N-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin TSMT RUR020N02TL
- RS Stock No.:
- 124-6841
- Mfr. Part No.:
- RUR020N02TL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD310.00
(exc. GST)
TWD325.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | TWD12.40 | TWD310.00 |
| 125 - 225 | TWD12.00 | TWD300.00 |
| 250 - 600 | TWD11.80 | TWD295.00 |
| 625 - 1225 | TWD11.40 | TWD285.00 |
| 1250 + | TWD11.20 | TWD280.00 |
*price indicative
- RS Stock No.:
- 124-6841
- Mfr. Part No.:
- RUR020N02TL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSMT | |
| Series | RUR020N02 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 0.95mm | |
| Width | 1.8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSMT | ||
Series RUR020N02 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 0.95mm | ||
Width 1.8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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