ROHM RQ5H020SP Type P-Channel MOSFET, 2 A, 45 V Enhancement, 3-Pin TSMT RQ5H020SPTL
- RS Stock No.:
- 133-3302
- Mfr. Part No.:
- RQ5H020SPTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD390.00
(exc. GST)
TWD409.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 17, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | TWD15.60 | TWD390.00 |
| 125 - 225 | TWD15.30 | TWD382.50 |
| 250 - 1225 | TWD14.90 | TWD372.50 |
| 1250 - 2475 | TWD14.60 | TWD365.00 |
| 2500 + | TWD14.20 | TWD355.00 |
*price indicative
- RS Stock No.:
- 133-3302
- Mfr. Part No.:
- RQ5H020SPTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Series | RQ5H020SP | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.8 mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 45V | ||
Series RQ5H020SP | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.8 mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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