onsemi NTK Type P-Channel MOSFET, 870 mA, 20 V Enhancement, 3-Pin SOT-723 NTK3139PT1G
- RS Stock No.:
- 124-5404
- Mfr. Part No.:
- NTK3139PT1G
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 4000 units)*
TWD12,400.00
(exc. GST)
TWD13,040.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 4,000 unit(s) shipping from July 28, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | TWD3.10 | TWD12,400.00 |
| 8000 - 36000 | TWD3.00 | TWD12,000.00 |
| 40000 + | TWD3.00 | TWD12,000.00 |
*price indicative
- RS Stock No.:
- 124-5404
- Mfr. Part No.:
- NTK3139PT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 870mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-723 | |
| Series | NTK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 550mW | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | -6V, +6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 550μm | |
| Length | 1.25mm | |
| Width | 850μm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 870mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-723 | ||
Series NTK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 550mW | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs -6V, +6V | ||
Maximum Operating Temperature 150°C | ||
Height 550μm | ||
Length 1.25mm | ||
Width 850μm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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