Infineon OptiMOS N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1

RS Stock No.:: 110-9115
Mfr. Part No.:: BSC097N06NSATMA1
Manufacturer:: Infineon

Infineon OptiMOS N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1

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Subtotal (1 pack of 25 units)*

TWD967.50

(exc. GST)

TWD1,016.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

Temporarily out of stock

4,375 unit(s) shipping from December 10, 2026

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Units	Per unit	Per Pack*
25 +	TWD38.70	TWD967.50

*price indicative

RS Stock No.:: 110-9115
Mfr. Part No.:: BSC097N06NSATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	46A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	36W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	5.35mm
	Width	6.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 46A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 36W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 5.35mm
	Width 6.1mm
	Standards/Approvals No
	Automotive Standard No

RoHS Status: Not Applicable

Infineon OptiMOS Series MOSFET, 60V Drain Source Voltage, 46A Continuous Drain Current - BSC097N06NSATMA1

This MOSFET is a power transistor designed for switching and amplification in high-current, low-voltage circuits. It operates across an extended temperature span and is supplied in a compact surface-mount package suitable for dense board layouts. The device is intended for demanding electronic assemblies where efficient conduction and gate control are required.

Features and Benefits:

• Maximum drain-source voltage 60V enables robust low-voltage switching
• Continuous drain current 46A supports high-current load handling
• Low RDS(on) 14.6 mΩ reduces conduction losses in power paths
• Maximum power dissipation 36W allows sustained thermal loading
• Typical gate charge 12 nC provides swift gate transitions
• Gate-source tolerance 20V permits flexible drive voltages

Applications

• Suitable for synchronous buck regulator stages
• Ideal for motor-drive half-bridge circuits
• Used with DC-DC converters in server power supplies
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load switching

What thermal environment can it withstand during operation?

It is rated to operate between -55 °C and 150 °C, permitting use across industrial and elevated-temperature applications.

What package and mounting method are provided for PCB assembly?

The component is supplied in a TDSON package and is designed for surface mounting to facilitate automated assembly.

What channel type and mode are implemented for switching behaviour?

The device uses an N-channel enhancement-mode topology suitable for low-side and high-side switching when appropriately driven.

How many electrical connections does the device present to a circuit?

It features an 8‑pin configuration to accommodate gate, drain and source connections and thermal conduction paths.