Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON

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Bulk discount available

Subtotal (1 reel of 5000 units)*

TWD53,500.00

(exc. GST)

TWD56,200.00

(inc. GST)

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Units
Per unit
Per Reel*
5000 - 20000TWD10.70TWD53,500.00
25000 +TWD10.50TWD52,500.00

*price indicative

RS Stock No.:
218-2985
Mfr. Part No.:
BSZ099N06LS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.9mΩ

Channel Mode

N

Maximum Power Dissipation Pd

36W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.9nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.4mm

Width

3.4 mm

Height

1.1mm

Automotive Standard

No

The Infineon OptiMOS™ series N-channel power MOSFET. It is highly suitable for wireless charging, adapter and telecom applications. The devices low gate charge (Q g) reduces switching losses without compromising conduction losses.

100% avalanche tested

Superior thermal resistance

Pb-free lead plating

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