Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1
- RS Stock No.:
- 110-7754
- Distrelec Article No.:
- 304-36-977
- Mfr. Part No.:
- BSP372NH6327XTSA1
- Manufacturer:
- Infineon
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TWD1,465.00
(exc. GST)
TWD1,538.00
(inc. GST)
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In Stock
- Plus 800 unit(s) shipping from August 10, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | TWD29.30 | TWD1,465.00 |
| 250 - 450 | TWD28.50 | TWD1,425.00 |
| 500 + | TWD28.10 | TWD1,405.00 |
*price indicative
- RS Stock No.:
- 110-7754
- Distrelec Article No.:
- 304-36-977
- Mfr. Part No.:
- BSP372NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP372NH6327XTSA1
This MOSFET is a surface‑mount switching transistor designed for use where compact, high‑voltage N‑channel control is required. It operates across a wide temperature range suitable for demanding environments and is intended for applications that need moderate continuous current with efficient switching behaviour.
Features and Benefits:
• 100V drain‑source capability supports high‑voltage circuits
• 270 mΩ low RDS(on) reduces conduction losses
• 1.8A continuous drain current for steady load handling
• 9.5 nC typical gate charge enables fast drive response
• 1.8W power dissipation manages thermal stress in SOT‑223
• 20V maximum gate drive allows flexible gate‑drive design
• 270 mΩ low RDS(on) reduces conduction losses
• 1.8A continuous drain current for steady load handling
• 9.5 nC typical gate charge enables fast drive response
• 1.8W power dissipation manages thermal stress in SOT‑223
• 20V maximum gate drive allows flexible gate‑drive design
Applications
• Suitable for automotive electronic subsystems requiring rugged parts
• Ideal for DC‑DC converters in compact power modules
• Used with motor drivers needing high‑voltage switching
• Can be used for battery management and charging circuits
• Used for general‑purpose switching in industrial control boards
• Ideal for DC‑DC converters in compact power modules
• Used with motor drivers needing high‑voltage switching
• Can be used for battery management and charging circuits
• Used for general‑purpose switching in industrial control boards
What package allows easy soldering and thermal transfer?
The device is supplied in a SOT‑223 surface‑mount package providing a balance of compact footprint and a larger tab for heat dissipation.
How does it cope with extreme ambient conditions?
It is specified to operate from -55 °C up to 150 °C, covering low‑temperature starts and high‑temperature operating scenarios.
What gate voltage limits should designers observe?
The gate‑to‑source voltage must not exceed ±20V to remain within safe operating bounds.
What type of channel and mode does it use?
It utilises an N‑channel enhancement‑mode topology designed for standard switching and control tasks.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
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