STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP
- RS Stock No.:
- 103-1568
- Mfr. Part No.:
- STE40NC60
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 10 units)*
TWD10,630.00
(exc. GST)
TWD11,161.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | TWD1,063.00 | TWD10,630.00 |
| 20 - 30 | TWD1,031.00 | TWD10,310.00 |
| 40 + | TWD1,000.00 | TWD10,000.00 |
*price indicative
- RS Stock No.:
- 103-1568
- Mfr. Part No.:
- STE40NC60
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ISOTOP | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 307.5nC | |
| Maximum Power Dissipation Pd | 460W | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.1mm | |
| Standards/Approvals | No | |
| Length | 38.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ISOTOP | ||
Series MDmesh, SuperMESH | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 307.5nC | ||
Maximum Power Dissipation Pd 460W | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 9.1mm | ||
Standards/Approvals No | ||
Length 38.2mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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