STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 53 A, 500 V Enhancement, 4-Pin ISOTOP STE53NC50
- RS Stock No.:
- 168-6097
- Mfr. Part No.:
- STE53NC50
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 10 units)*
TWD9,418.00
(exc. GST)
TWD9,888.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | TWD941.80 | TWD9,418.00 |
| 20 - 30 | TWD913.50 | TWD9,135.00 |
| 40 + | TWD886.10 | TWD8,861.00 |
*price indicative
- RS Stock No.:
- 168-6097
- Mfr. Part No.:
- STE53NC50
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | ISOTOP | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 460W | |
| Typical Gate Charge Qg @ Vgs | 310nC | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.1mm | |
| Length | 38.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type ISOTOP | ||
Series MDmesh, SuperMESH | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 460W | ||
Typical Gate Charge Qg @ Vgs 310nC | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.1mm | ||
Length 38.2mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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