Microchip Half Bridge mSiC N-Channel SiC Power Module, 151 A, 3.3 kV Enhancement Mode MSCSM330AM15CD3NG
- RS Stock No.:
- 854-516
- Mfr. Part No.:
- MSCSM330AM15CD3NG
- Manufacturer:
- Microchip
N
The image is for reference only, please refer to product details and specifications
Subtotal (1 unit)*
TWD22,598.00
(exc. GST)
TWD23,727.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 28, 2027
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Units | Per unit |
|---|---|
| 1 + | TWD22,598.00 |
*price indicative
- RS Stock No.:
- 854-516
- Mfr. Part No.:
- MSCSM330AM15CD3NG
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 3.3kV | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1013W | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type SiC Power Module | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 3.3kV | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1013W | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip Advanced SiC power module offers a phase leg design with impressive ratings, intended primarily for high-efficiency applications in power electronics, ensuring reliability and superior performance under demanding conditions.
Integrated SiC Schottky Diodes provide zero reverse recovery for reduced losses
Kelvin source design simplifies gate drive arrangements
Robust thermal management with excellent junction-to-case thermal resistance
High reliability and direct mounting capabilities ensure seamless integration
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