STMicroelectronics STH285N10F8-6AG N-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK STH285N10F8-6AG
- RS Stock No.:
- 800-460
- Mfr. Part No.:
- STH285N10F8-6AG
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD108.00
(exc. GST)
TWD113.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 275 unit(s) shipping from October 19, 2026
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Units | Per unit |
|---|---|
| 1 - 9 | TWD108.00 |
| 10 - 24 | TWD105.00 |
| 25 - 99 | TWD103.00 |
| 100 - 499 | TWD88.00 |
| 500 + | TWD83.00 |
*price indicative
- RS Stock No.:
- 800-460
- Mfr. Part No.:
- STH285N10F8-6AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 292A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK | |
| Series | STH285N10F8-6AG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 4V | |
| Typical Gate Charge Qg @ Vgs | 177nC | |
| Maximum Power Dissipation Pd | 341W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7mm | |
| Standards/Approvals | ECOPACK | |
| Length | 10.4mm | |
| Height | 15.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 292A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK | ||
Series STH285N10F8-6AG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 4V | ||
Typical Gate Charge Qg @ Vgs 177nC | ||
Maximum Power Dissipation Pd 341W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.7mm | ||
Standards/Approvals ECOPACK | ||
Length 10.4mm | ||
Height 15.8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
AEC-Q101 qualified
175 °C maximum operating junction temperature
100% avalanche tested
Excellent FoM (figure of merit)
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