Infineon StrongIRFET N-Channel Power MOSFET, 122 A, 30 V Enhancement, 3-Pin PG-TO263-3 IPB020N03LF2SATMA1

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TWD67.00

(exc. GST)

TWD70.35

(inc. GST)

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Units
Per unit
1 - 9TWD67.00
10 - 24TWD55.00
25 - 99TWD36.00
100 - 499TWD35.00
500 +TWD34.00

*price indicative

RS Stock No.:
762-989
Mfr. Part No.:
IPB020N03LF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

122A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-TO263-3

Series

StrongIRFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.05mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

33nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

4.83mm

Length

15.88mm

Standards/Approvals

RoHS

Width

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 Power Transistor is a 30V N-channel MOSFET suitable for various applications. It operates in extreme conditions, with a maximum temperature rating of 175°C and conforms to environmental regulations.

100% avalanche tested

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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