Vishay TrenchFET P-Channel MOSFET, -36 A, -20 V Enhancement, 6-Pin PowerPAK SC-70 SIA5213DJ-T1-GE3
- RS Stock No.:
- 735-255
- Mfr. Part No.:
- SIA5213DJ-T1-GE3
- Manufacturer:
- Vishay
Get a bulk buy discount
Add 25 more to save 33%
View bulk pricing optionsSubtotal (1 unit)*
TWD18.00
(exc. GST)
TWD18.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 6,000 unit(s) shipping from November 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 24 | TWD18.00 | - |
| 25 - 99 | TWD12.00 | 33% |
| 100 + | TWD6.00 | 66% |
*price indicative
- RS Stock No.:
- 735-255
- Mfr. Part No.:
- SIA5213DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -36A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SC-70 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.019Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 19W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 2.15mm | |
| Width | 2.15mm | |
| Height | 800μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -36A | ||
Maximum Drain Source Voltage Vds -20V | ||
Series TrenchFET | ||
Package Type PowerPAK SC-70 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.019Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 19W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 2.15mm | ||
Width 2.15mm | ||
Height 800μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Related links
- Vishay TrenchFET P-Channel MOSFET -40 V Enhancement, 6-Pin PowerPAK SC-70W-6L SQA489CEJW-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -80 V Enhancement, 6-Pin PowerPAK SC-70W-6L SQA437CEJW-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK 1212-8SH SISH521EDN-T1-GE3
- Vishay SIA433EDJ-T1-GE3 6-Pin PowerPAK SC-70-6L, Surface
- Vishay Single 1 Type P-Channel MOSFET 20 V, 6-Pin PowerPAK SC-70-6L SIA437DJ-T1-GE3
- Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3