STMicroelectronics SCT019 N-Channel Power MOSFET, 90 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG
- RS Stock No.:
- 719-469
- Mfr. Part No.:
- SCT019W120G3-4AG
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD595.00
(exc. GST)
TWD624.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 05, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | TWD595.00 |
| 5 + | TWD577.00 |
*price indicative
- RS Stock No.:
- 719-469
- Mfr. Part No.:
- SCT019W120G3-4AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247-4 | |
| Series | SCT019 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10V, 22V | |
| Maximum Power Dissipation Pd | 486W | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 200°C | |
| Length | 21.1mm | |
| Width | 15.9mm | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247-4 | ||
Series SCT019 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10V, 22V | ||
Maximum Power Dissipation Pd 486W | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 200°C | ||
Length 21.1mm | ||
Width 15.9mm | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Related links
- RS PRO Black 3 mm² Hook Up Wire 30m
- RS PRO RS-172 Temperature & Humidity Data Logger
- 2961105 | Phoenix Contact PCB Mount Power Relay 6A Switching Current, SPDT
- Tedea Huntleigh Low Profile Load Cell Compression Measure
- ABB D45 Pluto Series Safety Controller 6 Safety Outputs, 24 V dc
- TE Connectivity Coaxial Cable RG400 Coaxial, Unterminated
- RS PRO I/O Extension Module for Use with RS PRO Logic Modules Digital
- Fluke 289 Handheld Digital Multimeter 10A ac Max 1000V ac Max