ROHM RD3L08DBLHRB N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL
- RS Stock No.:
- 687-458
- Mfr. Part No.:
- RD3L08DBLHRBTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
TWD75.00
(exc. GST)
TWD78.76
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 100 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD37.50 | TWD75.00 |
| 20 - 48 | TWD33.50 | TWD67.00 |
| 50 - 198 | TWD30.00 | TWD60.00 |
| 200 - 998 | TWD29.00 | TWD58.00 |
| 1000 + | TWD28.00 | TWD56.00 |
*price indicative
- RS Stock No.:
- 687-458
- Mfr. Part No.:
- RD3L08DBLHRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08DBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 76W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.5mm | |
| Height | 2.3mm | |
| Width | 6.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08DBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 76W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.5mm | ||
Height 2.3mm | ||
Width 6.8mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET is engineered for demanding applications requiring high efficiency and robust performance. This 60V, 80A N channel MOSFET features ultra-low on-resistance, delivering superior electrical performance while ensuring reliability. It is designed to operate optimally in various environments, making it ideal for automotive applications, including advanced driver assistance systems (ADAS) and lighting. With compliance to AEC-Q101 and 100% avalanche testing, this component ensures high standards of safety and efficiency in any electronic design. Its compact packaging enables easy integration into space-constrained layouts.
Delivers low on resistance of 7.6mΩ, enhancing efficiency in power transfer
Rated for a maximum continuous drain current of 80A, ensuring reliability under significant loads
Features a wide drain-source voltage of 60V suitable for various high-voltage applications
All products are RoHS compliant, supporting environmentally friendly designs
100% avalanche tested for increased reliability and component longevity
Designed in a DPAK TO-252 package for easy mounting in compact circuits
Offers a broad operating temperature range from -55°C to 175°C, ensuring performance in extreme conditions
Qualified to AEC Q101 , making it ideal for automotive and high-reliability applications
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