ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1
- RS Stock No.:
- 687-385
- Mfr. Part No.:
- HT8MD5HTB1
- Manufacturer:
- ROHM
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TWD49.00
(exc. GST)
TWD51.44
(inc. GST)
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In Stock
- 200 unit(s) ready to ship from another location
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD24.50 | TWD49.00 |
| 20 - 48 | TWD21.50 | TWD43.00 |
| 50 - 198 | TWD20.00 | TWD40.00 |
| 200 - 998 | TWD19.50 | TWD39.00 |
| 1000 + | TWD19.00 | TWD38.00 |
*price indicative
- RS Stock No.:
- 687-385
- Mfr. Part No.:
- HT8MD5HTB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSMT-8 | |
| Series | HT8MD5HT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13.0W | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.45mm | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Width | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSMT-8 | ||
Series HT8MD5HT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13.0W | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.45mm | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Width 3.4mm | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.
Low on resistance designs enhance efficiency in power applications
High power capabilities in a compact HSMT8 package streamline integration
RoHS compliant and halogen-free construction supports eco-friendly designs
100% Rg and UIS tested for reliability under demanding operational conditions
Optimised for motor drive applications, ensuring effective power control
Wide voltage range ensures versatility in various electronic environments
Designed to withstand maximum junction temperatures of up to 150°C
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