Vishay SIHM080N60E Type N-Channel Single MOSFETs, 51 A, 600 V Enhancement, 4-Pin PowerPAK
- RS Stock No.:
- 653-178
- Mfr. Part No.:
- SIHM080N60E-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
TWD238.00
(exc. GST)
TWD249.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD238.00 |
| 10 - 49 | TWD231.00 |
| 50 - 99 | TWD224.00 |
| 100 + | TWD193.00 |
*price indicative
- RS Stock No.:
- 653-178
- Mfr. Part No.:
- SIHM080N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | SIHM080N60E | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series SIHM080N60E | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Power MOSFET is a 4th generation E Series MOSFET designed for high-efficiency switching in demanding applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance. Packaged in PowerPAK 8x8L, it's Ideal for server, telecom, SMPS, and power factor correction supplies.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SIHM080N60E Type N-Channel Single MOSFETs 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay SIJ4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SIS9122 Dual N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SISS5208DN Type N-Channel Single MOSFETs 20 V Enhancement, 8-Pin PowerPAK
- Vishay SIB4122DK Type N-Channel Single MOSFETs 100 V Enhancement, 7-Pin PowerPAK