Vishay SIHM080N60E Type N-Channel Single MOSFETs, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3

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Subtotal (1 reel of 3000 units)*

TWD550,200.00

(exc. GST)

TWD577,710.00

(inc. GST)

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3000 +TWD183.40TWD550,200.00

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RS Stock No.:
653-177
Mfr. Part No.:
SIHM080N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

600V

Series

SIHM080N60E

Package Type

PowerPAK

Mount Type

PCB

Pin Count

4

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

500W

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

No

Width

7.9 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Power MOSFET is a 4th generation E Series MOSFET designed for high-efficiency switching in demanding applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance. Packaged in PowerPAK 8x8L, it's Ideal for server, telecom, SMPS, and power factor correction supplies.

Pb Free

Halogen free

RoHS compliant

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