Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-149
- Mfr. Part No.:
- SISS5208DN-T1-GE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 653-149
- Mfr. Part No.:
- SISS5208DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 172A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK | |
| Series | SISS5208DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0013Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 56.8W | |
| Typical Gate Charge Qg @ Vgs | 24.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.40mm | |
| Length | 3.40mm | |
| Standards/Approvals | RoHS | |
| Height | 0.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 172A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK | ||
Series SISS5208DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0013Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 56.8W | ||
Typical Gate Charge Qg @ Vgs 24.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.40mm | ||
Length 3.40mm | ||
Standards/Approvals RoHS | ||
Height 0.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SISS5208DN Series Single MOSFETs, 56.8W Maximum Power Dissipation, 20V Maximum Drain Source Voltage - SISS5208DN-T1-GE3
This single MOSFETs device is an N-channel enhancement transistor designed for high-current switching in compact surface-mount applications. It operates across a wide temperature range and is intended for situations requiring low conduction losses and rapid gate-driven switching. The package supports mounting on PCB land patterns where thermal and electrical performance are priorities.
Features and Benefits:
• Very low on-resistance 0.0013Ω reduces conduction losses
• High continuous drain current 172A supports heavy loads
• Low forward voltage 1.1V improves efficiency under load
• Gate charge 24.6nC enables controlled switching speed
• Maximum power dissipation 56.8W manages elevated thermal stress
• Gate-source withstand 8V permits robust drive margin
• High continuous drain current 172A supports heavy loads
• Low forward voltage 1.1V improves efficiency under load
• Gate charge 24.6nC enables controlled switching speed
• Maximum power dissipation 56.8W manages elevated thermal stress
• Gate-source withstand 8V permits robust drive margin
Applications
• Suitable for synchronous buck converter power stages
• Ideal for high-current motor driver outputs
• Used with server power distribution circuits
• Can be used for battery protection and management
• Suitable for telecom rectifier and power-supply rails
• Ideal for high-current motor driver outputs
• Used with server power distribution circuits
• Can be used for battery protection and management
• Suitable for telecom rectifier and power-supply rails
What voltage stress can it withstand between drain and source?
It is rated to tolerate up to 20V between drain and source under normal conditions.
How does the device behave in extreme temperatures?
It is specified to operate from -55°C up to 150°C, allowing it to function across typical industrial temperature ranges.
What mounting style is required for assembly?
It is supplied in a PowerPAK surface-mount package, intended for PCB solder attachment using standard reflow processes.
How many electrical connections does it provide?
The device has an eight-pin configuration to facilitate power and gate connections while optimising thermal paths.
Related links
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