Toshiba Type P-Channel MOSFET, 18 A, 30 V Enhancement, 8-Pin SOP TPC8117(TE12L,Q)
- RS Stock No.:
- 582-470
- Mfr. Part No.:
- TPC8117(TE12L,Q)
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD231.00
(exc. GST)
TWD242.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 365 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD46.20 | TWD231.00 |
| 25 - 120 | TWD45.00 | TWD225.00 |
| 125 - 245 | TWD43.60 | TWD218.00 |
| 250 - 495 | TWD42.20 | TWD211.00 |
| 500 + | TWD41.00 | TWD205.00 |
*price indicative
- RS Stock No.:
- 582-470
- Mfr. Part No.:
- TPC8117(TE12L,Q)
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 1.9W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Height | 1.5mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 1.9W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Height 1.5mm | ||
Length 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, TPC Series, Toshiba
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