Toshiba Type P-Channel MOSFET, 3 A, 20 V Enhancement, 3-Pin UFM SSM3J135TU(TE85L)
- RS Stock No.:
- 756-2757
- Mfr. Part No.:
- SSM3J135TU(TE85L)
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD125.00
(exc. GST)
TWD131.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 1,350 unit(s) shipping from June 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD12.50 | TWD125.00 |
| 50 - 90 | TWD12.00 | TWD120.00 |
| 100 - 240 | TWD11.70 | TWD117.00 |
| 250 - 490 | TWD11.40 | TWD114.00 |
| 500 + | TWD11.10 | TWD111.00 |
*price indicative
- RS Stock No.:
- 756-2757
- Mfr. Part No.:
- SSM3J135TU(TE85L)
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UFM | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 260mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.91V | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Height | 0.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UFM | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 260mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.91V | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Height 0.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
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