STMicroelectronics SCT N-Channel MOSFET, 110 A, 900 V Enhancement, 4-Pin Hip-247-4 SCT012W90G3-4AG
- RS Stock No.:
- 482-970
- Mfr. Part No.:
- SCT012W90G3-4AG
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD2,146.00
(exc. GST)
TWD2,253.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 30 unit(s) shipping from October 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | TWD2,146.00 |
| 5 + | TWD2,082.00 |
*price indicative
- RS Stock No.:
- 482-970
- Mfr. Part No.:
- SCT012W90G3-4AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Length | 21mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 5mm | |
| Width | 15.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Length 21mm | ||
Standards/Approvals AEC-Q101 | ||
Height 5mm | ||
Width 15.8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
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