Infineon F4-11MR12W2M1H_B70 N-Channel MOSFET, 60 A, 1.2 kV Enhancement F411MR12W2M1HPB76BPSA1
- RS Stock No.:
- 349-250
- Mfr. Part No.:
- F411MR12W2M1HPB76BPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
TWD11,766.00
(exc. GST)
TWD12,354.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
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- 18 left, ready to ship from another location
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Units | Per unit |
|---|---|
| 1 + | TWD11,766.00 |
*price indicative
- RS Stock No.:
- 349-250
- Mfr. Part No.:
- F411MR12W2M1HPB76BPSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | F4-11MR12W2M1H_B70 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 23.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 60749, IEC 60747, 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series F4-11MR12W2M1H_B70 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 23.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 60749, IEC 60747, 60068 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. This MOSFET features best-in-class packaging with a compact 12 mm height, ensuring optimal performance while saving space. It utilizes leading-edge Wide Bandgap materials, enhancing power efficiency and thermal management. The design boasts very low module stray inductance, reducing power losses and improving switching speed.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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