Infineon F4-17MR12W1M1H_B76 N-Channel MOSFET, 45 A, 1.2 kV Enhancement EasyPACK F417MR12W1M1HB76BPSA1

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TWD7,597.00

(exc. GST)

TWD7,976.85

(inc. GST)

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RS Stock No.:
349-252
Mfr. Part No.:
F417MR12W1M1HB76BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

EasyPACK

Series

F4-17MR12W1M1H_B76

Mount Type

Screw

Maximum Drain Source Resistance Rds

34.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.35V

Maximum Gate Source Voltage Vgs

23V

Maximum Power Dissipation Pd

20mW

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60747, IEC 60068, IEC 61140, IEC 60749

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. This MOSFET is designed with best in class packaging, offering a compact 12 mm height for efficient space utilization. It leverages leading edge Wide Bandgap materials, providing enhanced power efficiency and performance. With very low module stray inductance, it minimizes power loss and improves switching dynamics.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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