Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.5 A, 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- RS Stock No.:
- 284-806
- Mfr. Part No.:
- ISZ810P06LMATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD264.00
(exc. GST)
TWD277.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 13, 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | TWD26.40 | TWD264.00 |
| 100 - 240 | TWD25.10 | TWD251.00 |
| 250 - 490 | TWD23.30 | TWD233.00 |
| 500 - 990 | TWD21.40 | TWD214.00 |
| 1000 + | TWD20.60 | TWD206.00 |
*price indicative
- RS Stock No.:
- 284-806
- Mfr. Part No.:
- ISZ810P06LMATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -19.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TSDSON-8FL | |
| Series | OptiMOS Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 81mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -19.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TSDSON-8FL | ||
Series OptiMOS Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 81mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET is an Advanced power transistor delivers exceptional performance and reliability, making it an Ideal choice for demanding industrial applications. The Infineon OptiMOS Power Transistor series excels in energy efficiency with its low on resistance characteristics, ensuring minimal energy loss during operation. Its robust design is fully qualified according to JEDEC standards, providing peace of mind for engineers seeking Durable components. Operating at 60V, it is tailored for high performance applications while maintaining low thermal resistance, allowing for effective heat management.
P channel configuration optimises current control
Logic level compatibility for easy interfacing
Avalanche tested for reliability under stress
Pb free lead plating meets environmental regulations
Halogen free construction supports cleaner production
Enhanced thermal characteristics for consistent operation
High continuous drain current for diverse applications
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