ROHM RV7 Type N-Channel MOSFET, 30 V Enhancement, 3-Pin DFN1212-3 RV7E040AJTCR1
- RS Stock No.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 25 units)*
TWD210.00
(exc. GST)
TWD220.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 100 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | TWD8.40 | TWD210.00 |
| 100 - 225 | TWD7.90 | TWD197.50 |
| 250 - 475 | TWD7.40 | TWD185.00 |
| 500 - 975 | TWD6.80 | TWD170.00 |
| 1000 + | TWD6.50 | TWD162.50 |
*price indicative
- RS Stock No.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | RV7 | |
| Package Type | DFN1212-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.0nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.2 mm | |
| Length | 1.2mm | |
| Height | 0.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 30V | ||
Series RV7 | ||
Package Type DFN1212-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.0nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 1.1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.2 mm | ||
Length 1.2mm | ||
Height 0.5mm | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating
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