ROHM R6530KNX3 Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-220 R6530KNX3C16
- RS Stock No.:
- 249-1126
- Mfr. Part No.:
- R6530KNX3C16
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD196.00
(exc. GST)
TWD205.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 78 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD98.00 | TWD196.00 |
| 50 - 98 | TWD92.50 | TWD185.00 |
| 100 - 248 | TWD91.00 | TWD182.00 |
| 250 - 498 | TWD89.00 | TWD178.00 |
| 500 + | TWD87.00 | TWD174.00 |
*price indicative
- RS Stock No.:
- 249-1126
- Mfr. Part No.:
- R6530KNX3C16
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | R6530KNX3 | |
| Package Type | TO-220 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series R6530KNX3 | ||
Package Type TO-220 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM high-speed switching N channel 650 V, 30 A drain current power MOSFET are high-speed switching products, super junction MOSFETs, that place an emphasis on high efficiency, this series products achieve higher efficiency via high-speed switching, h
Low on-resistance
Ultra fast switching
Parallel use is easy
Pb-free plating
RoHs compliant
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