ROHM HP8 2 N-Channel MOSFET, 10 A, 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1

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Subtotal (1 tape of 10 units)*

TWD196.00

(exc. GST)

TWD205.80

(inc. GST)

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Units
Per unit
Per Tape*
10 - 90TWD19.60TWD196.00
100 - 240TWD18.70TWD187.00
250 - 490TWD17.20TWD172.00
500 - 990TWD15.90TWD159.00
1000 +TWD15.30TWD153.00

*price indicative

Packaging Options:
RS Stock No.:
264-764
Mfr. Part No.:
HT8KC5TB1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

60V

Package Type

HSMT-8

Series

HP8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.1nC

Maximum Power Dissipation Pd

13W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM 60V 10A Dual Nch+Pch is a low on-resistance MOSFET ideal for switching applications.

High Power small mold Package (HSMT8)

Pb-free lead plating and RoHS compliant

Halogen Free

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