ROHM RS6 Type N-Channel MOSFET, 135 A, 80 V Enhancement, 8-Pin HSOP-8 RS6N120BHTB1
- RS Stock No.:
- 264-701
- Mfr. Part No.:
- RS6N120BHTB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 5 units)*
TWD312.00
(exc. GST)
TWD327.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | TWD62.40 | TWD312.00 |
| 50 - 95 | TWD59.20 | TWD296.00 |
| 100 - 495 | TWD55.00 | TWD275.00 |
| 500 - 995 | TWD50.60 | TWD253.00 |
| 1000 + | TWD48.80 | TWD244.00 |
*price indicative
- RS Stock No.:
- 264-701
- Mfr. Part No.:
- RS6N120BHTB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | RS6 | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series RS6 | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power package, suitable for switching.
Low on-resistance
High power package (HSOP8)
Pb-free plating; RoHS compliant
Halogen free
100% Rg and UIS tested
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