ROHM RS1G120MN Type N-Channel MOSFET, 34 A, 40 V Enhancement, 8-Pin HSOP-8 RS1G120MNTB
- RS Stock No.:
- 124-6811
- Mfr. Part No.:
- RS1G120MNTB
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
TWD300.00
(exc. GST)
TWD315.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Being discontinued
- Final 1,600 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | TWD15.00 | TWD300.00 |
| 100 - 180 | TWD14.60 | TWD292.00 |
| 200 - 480 | TWD14.30 | TWD286.00 |
| 500 - 980 | TWD13.90 | TWD278.00 |
| 1000 + | TWD13.50 | TWD270.00 |
*price indicative
- RS Stock No.:
- 124-6811
- Mfr. Part No.:
- RS1G120MNTB
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSOP-8 | |
| Series | RS1G120MN | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Width | 5.8 mm | |
| Length | 5mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSOP-8 | ||
Series RS1G120MN | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Width 5.8 mm | ||
Length 5mm | ||
- COO (Country of Origin):
- TH
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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