onsemi NTMFS Type P-Channel MOSFET, 164 A, 30 V Enhancement, 8-Pin SO-8FL NTMFS005P03P8ZT1G
- RS Stock No.:
- 220-586
- Mfr. Part No.:
- NTMFS005P03P8ZT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 5 units)*
TWD175.00
(exc. GST)
TWD183.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 1,500 unit(s) shipping from April 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | TWD35.00 | TWD175.00 |
| 50 - 95 | TWD33.20 | TWD166.00 |
| 100 - 495 | TWD30.80 | TWD154.00 |
| 500 - 995 | TWD28.40 | TWD142.00 |
| 1000 + | TWD27.20 | TWD136.00 |
*price indicative
- RS Stock No.:
- 220-586
- Mfr. Part No.:
- NTMFS005P03P8ZT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTMFS | |
| Package Type | SO-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTMFS | ||
Package Type SO-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor MOSFET with Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction.
RoHS Compliant
Pb−free and Halogen free/BFR free
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