onsemi NVMFWS Type N-Channel MOSFET, 201 A, 80 V Enhancement, 8-Pin SO-8FL NVMFWS1D9N08XT1G
- RS Stock No.:
- 220-571
- Mfr. Part No.:
- NVMFWS1D9N08XT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 2 units)*
TWD154.00
(exc. GST)
TWD161.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,488 unit(s) shipping from January 26, 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD77.00 | TWD154.00 |
| 20 - 198 | TWD69.50 | TWD139.00 |
| 200 - 998 | TWD64.00 | TWD128.00 |
| 1000 - 1998 | TWD59.50 | TWD119.00 |
| 2000 + | TWD48.50 | TWD97.00 |
*price indicative
- RS Stock No.:
- 220-571
- Mfr. Part No.:
- NVMFWS1D9N08XT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFWS | |
| Package Type | SO-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 164W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC and PPAP Capable | |
| Height | 1mm | |
| Length | 4.9mm | |
| Width | 5.9 mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFWS | ||
Package Type SO-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 164W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC and PPAP Capable | ||
Height 1mm | ||
Length 4.9mm | ||
Width 5.9 mm | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- MY
The ON Semiconductor MOSFET has Low QRR. This device are Pb−Free, Halogen Free/BFR Free.
Low RDS(on) to Minimize Conduction Losses
RoHS Compliant
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