STMicroelectronics SCT Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 4-Pin SCT020W120G3-4AG
- RS Stock No.:
- 215-068
- Mfr. Part No.:
- SCT020W120G3-4AG
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 30 units)*
TWD50,760.00
(exc. GST)
TWD53,298.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 30 unit(s) shipping from June 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | TWD1,692.00 | TWD50,760.00 |
*price indicative
- RS Stock No.:
- 215-068
- Mfr. Part No.:
- SCT020W120G3-4AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Power Dissipation Pd | 541W | |
| Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Power Dissipation Pd 541W | ||
Forward Voltage Vf 3V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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