IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227 IXFN140N30P

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

TWD1,340.00

(exc. GST)

TWD1,407.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
1 - 2TWD1,340.00
3 - 4TWD1,312.00
5 +TWD1,287.00

*price indicative

Packaging Options:
RS Stock No.:
193-739
Distrelec Article No.:
302-53-363
Mfr. Part No.:
IXFN140N30P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Power Dissipation Pd

700W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

185nC

Maximum Operating Temperature

150°C

Width

25.07mm

Standards/Approvals

No

Length

38.2mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links