Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
- RS Stock No.:
- 222-4797
- Mfr. Part No.:
- FF900R12ME7B11BOSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tray of 6 units)**
TWD71,053.20
(exc. GST)
TWD74,605.86
(inc. GST)
Temporarily out of stock - back order for despatch 26/01/2027, delivery within 6 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over TWD2,857.00 (ex VAT)
Units | Per unit | Per Tray** |
|---|---|---|
| 6 - 6 | TWD11,842.20 | TWD71,053.20 |
| 12 - 12 | TWD11,386.70 | TWD68,320.20 |
| 18 + | TWD10,680.30 | TWD64,081.80 |
**price indicative
- RS Stock No.:
- 222-4797
- Mfr. Part No.:
- FF900R12ME7B11BOSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Maximum Continuous Collector Current | 900 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 20 mW | |
| Configuration | Dual | |
| Package Type | AG-ECONOD | |
| Channel Type | N | |
| Transistor Configuration | Common Emitter | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Maximum Continuous Collector Current 900 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 20 mW | ||
Configuration Dual | ||
Package Type AG-ECONOD | ||
Channel Type N | ||
Transistor Configuration Common Emitter | ||