Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

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Subtotal (1 unit)*

TWD9,926.00

(exc. GST)

TWD10,422.30

(inc. GST)

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Units
Per unit
1 - 9TWD9,926.00
10 - 99TWD9,677.00
100 - 249TWD9,436.00
250 - 499TWD9,199.00
500 +TWD8,522.00

*price indicative

Packaging Options:
RS Stock No.:
222-4798
Mfr. Part No.:
FF900R12ME7B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

900 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

20 mW

Package Type

AG-ECONOD

Configuration

Dual

Channel Type

N

Transistor Configuration

Common Emitter

The Infineon EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Also available with pre-applied Thermal Interface Material.

Highest power density
Best-in-class VCE sat
Tvj op = 175°C overload
Improved terminals
Optimized creepage distance for 1500 V PV applications

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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