Infineon, Type N-Channel IGBT Module, 450 A 1200 V, 11-Pin ECONOD, Clamp

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Subtotal (1 unit)*

TWD4,052.00

(exc. GST)

TWD4,254.60

(inc. GST)

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2 +TWD3,952.00

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RS Stock No.:
838-7052
Mfr. Part No.:
FF300R12ME4B11BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

450A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1.6kW

Package Type

ECONOD

Mount Type

Clamp

Channel Type

Type N

Pin Count

11

Switching Speed

1MHz

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Length

122.5mm

Height

17mm

Standards/Approvals

No

Width

62.5 mm

Automotive Standard

No

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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