Panasonic PhotoMOS Series Solid State Relay, 360 mA Load, Surface Mount, 350 V Load
- RS Stock No.:
- 205-6877
- Mfr. Part No.:
- AQW610EHA
- Manufacturer:
- Panasonic
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- Shipping from April 19, 2027
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 50 | TWD220.30 | TWD11,015.00 | - |
| 100 - 150 | TWD215.50 | TWD10,775.00 | TWD480.00 |
| 200 + | TWD210.90 | TWD10,545.00 | TWD1,880.00 |
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- RS Stock No.:
- 205-6877
- Mfr. Part No.:
- AQW610EHA
- Manufacturer:
- Panasonic
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Panasonic | |
| Product Type | Solid State Relay | |
| Maximum Load Current | 360mA | |
| Mount Type | Surface | |
| Maximum Load Voltage | 350V | |
| Minimum Load Voltage | 280V | |
| Series | PhotoMOS | |
| Terminal Type | Through Hole | |
| Contact Configuration | 2SPNO | |
| Switching Function | AC/DC Switching | |
| On State Resistance | 25Ω | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Output Type | MOSFET | |
| Capacitance | 1.5pF | |
| Off State Leakage Current | 10μA | |
| Select all | ||
|---|---|---|
Brand Panasonic | ||
Product Type Solid State Relay | ||
Maximum Load Current 360mA | ||
Mount Type Surface | ||
Maximum Load Voltage 350V | ||
Minimum Load Voltage 280V | ||
Series PhotoMOS | ||
Terminal Type Through Hole | ||
Contact Configuration 2SPNO | ||
Switching Function AC/DC Switching | ||
On State Resistance 25Ω | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Output Type MOSFET | ||
Capacitance 1.5pF | ||
Off State Leakage Current 10μA | ||
- COO (Country of Origin):
- JP
The Panasonic DIP8-pin with reinforced insulation. Both NO and NC are incorporated.
Reinforced insulation 5,000 V
Approx. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B Photo MOS
Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use
Controls low-level analogue signals
High sensitivity and high speed response
Low-level off-state leakage current
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