N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A
- RS Stock No.:
- 921-3066
- Mfr. Part No.:
- CSD18504Q5A
- Manufacturer:
- Texas Instruments
Subtotal (1 reel of 2500 units)**
TWD51,250.00
(exc. GST)
TWD53,800.00
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over TWD2,857.00 (ex VAT)
Units | Per unit | Per Reel** |
|---|---|---|
| 2500 - 10000 | TWD20.50 | TWD51,250.00 |
| 12500 + | TWD19.70 | TWD49,250.00 |
**price indicative
- RS Stock No.:
- 921-3066
- Mfr. Part No.:
- CSD18504Q5A
- Manufacturer:
- Texas Instruments
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.8mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 7.7 nC @ 4.5 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Manufacturer Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type VSONP | ||
Series NexFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5mm | ||
Maximum Operating Temperature +150 °C | ||
Length 5.8mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 7.7 nC @ 4.5 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||