STMicroelectronics MDmesh Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 920-6682
- Mfr. Part No.:
- STP12NM50
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD3,600.00
(exc. GST)
TWD3,780.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD72.00 | TWD3,600.00 |
| 100 - 150 | TWD70.40 | TWD3,520.00 |
| 200 + | TWD68.90 | TWD3,445.00 |
*price indicative
- RS Stock No.:
- 920-6682
- Mfr. Part No.:
- STP12NM50
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.15mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.15mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP12NM50
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STF14NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP14NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP19NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP28NM50N