N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXYS IXFN180N15P
- RS Stock No.:
- 920-0757
- Mfr. Part No.:
- IXFN180N15P
- Manufacturer:
- IXYS
190 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Tube of 10)
TWD787.30
(exc. GST)
TWD826.66
(inc. GST)
| Units | Per unit | Per Tube* |
| 10 - 10 | TWD787.30 | TWD7,873.00 |
| 20 - 30 | TWD763.70 | TWD7,637.00 |
| 40 + | TWD740.70 | TWD7,407.00 |
| *price indicative | ||
- RS Stock No.:
- 920-0757
- Mfr. Part No.:
- IXFN180N15P
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 150 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | SOT-227B |
| Series | HiperFET, Polar |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 11 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 680 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 38.23mm |
| Typical Gate Charge @ Vgs | 240 nC @ 10 V |
| Width | 25.42mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |