N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXYS IXTP50N20P
- RS Stock No.:
- 920-0717
- Mfr. Part No.:
- IXTP50N20P
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 15/05/2024, delivery within 6 working days
Added
Price (VAT excluded) Each (In a Tube of 50)
TWD124.20
(exc. GST)
TWD130.41
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 200 | TWD124.20 | TWD6,210.00 |
| 250 + | TWD111.80 | TWD5,590.00 |
| *price indicative | ||
- RS Stock No.:
- 920-0717
- Mfr. Part No.:
- IXTP50N20P
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220 |
| Series | HiperFET, Polar |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 60 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 360 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Width | 4.83mm |
| Length | 10.66mm |
| Height | 9.15mm |
| Minimum Operating Temperature | -55 °C |