Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 919-4902
- Mfr. Part No.:
- IRFP140NPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
TWD895.00
(exc. GST)
TWD939.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 275 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | TWD35.80 | TWD895.00 |
| 50 - 75 | TWD35.00 | TWD875.00 |
| 100 + | TWD32.50 | TWD812.50 |
*price indicative
- RS Stock No.:
- 919-4902
- Mfr. Part No.:
- IRFP140NPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF
This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.
Features & Benefits
• Maximum continuous drain current of 33A for enhanced load capabilities
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds
Applications
• Reliable use in switching power supplies
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification
What is the maximum voltage this component can handle?
It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.
How does the gate charge affect the operation?
A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.
What are the thermal characteristics of this component?
It operates effectively between -55°C and +175°C, ensuring reliability in different environments.
Can this component be used in automation projects?
Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.
How does the low RDS(on) enhance its performance?
The low maximum drain-source resistance helps to reduce conduction losses, leading to more energy-efficient operation.
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