Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3

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Subtotal (1 reel of 3000 units)*

TWD17,700.00

(exc. GST)

TWD18,600.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 12000TWD5.90TWD17,700.00
15000 +TWD5.80TWD17,400.00

*price indicative

RS Stock No.:
919-0250
Mfr. Part No.:
SI2301CDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

Si2301CDS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

112mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-8V, +8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.5nC

Maximum Power Dissipation Pd

860mW

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

1.02mm

Width

1.4mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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