Wolfspeed Type N-Channel MOSFET, 5.3 A, 1700 V Enhancement, 7-Pin TO-263 C2M1000170J

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Subtotal (1 pack of 2 units)*

TWD563.00

(exc. GST)

TWD591.16

(inc. GST)

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Per Pack*
2 - 12TWD281.50TWD563.00
14 - 24TWD274.50TWD549.00
26 +TWD269.00TWD538.00

*price indicative

Packaging Options:
RS Stock No.:
915-8833
Mfr. Part No.:
C2M1000170J
Manufacturer:
Wolfspeed
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Brand

Wolfspeed

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13nC

Forward Voltage Vf

3.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

10.99 mm

Height

4.57mm

Length

10.23mm

Automotive Standard

No

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

MOSFET Transistors, Wolfspeed


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